Chanzon 2N7000 TO-92 NMOS MOS N-Channel Power MOSFET Transistor, Ideal for Electronic Circuits (Pack of 100pcs)

Description

Product Description:The 2N7000 MOSFET is an N-Channel Enhancement Mode Field-Effect Transistor, designed for high-density cell construction to provide a low on-resistance (RDS(on)). It is a voltage-controlled small signal switch known for its ruggedness and reliability, making it ideal for a variety of applications.Key Features:Low RDS(on) for efficient power managementHigh saturation current capabilityReliable performance in various electronic circuitsMax Ratings:Drain-Source Voltage (VDS): 60VContinuous Drain Current (ID): 0.2APower Dissipation (PD): 0.625WThermal Resistance from Junction to Ambient (RθJA): 200℃/WJunction Temperature (TJ): 150℃Electrical Characteristics:Drain-Source Breakdown Voltage (V(BR)DSS): 60VGate-Threshold Voltage (V(GS)th): 0.8 - 3VZero Gate Voltage Drain Current (IDSS): 1μAOn-state Drain Current (ID(ON)) at VGS=4.5V, VDS=10V: 75mADrain-Source On-Resistance (RDS(on)) at VGS=10V, ID=500mA: 5ΩDrain-source on-voltage (VDS(on)) at VGS=4.5V, ID=75mA: 0.45VInput Capacitance (Ciss): 60pFOutput Capacitance (Coss): 25pFReverse Transfer Capacitance (Crss) at VDS=25V, VGS=0V, f=1MHz: 5pFPerformance Metrics:Turn-on Time (td(on)): 10nsTurn-off Time (td(off)): 10ns (VDD=15V, RL=30Ω, ID=500mA, VGEN=10V, RG=25Ω)This MOSFET is perfect for use as a load switch in portable devices and DC/DC converters, ensuring efficient and reliable operation.